tm february 2007 FDMC8854 n-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation FDMC8854 rev.c www.fairchildsemi.com 1 FDMC8854 n-channel power trench ? mosfet 30v, 15a, 5.7m ? features ? max r ds(on) = 5.7m ? at v gs = 10v, i d = 15a ? max r ds(on) = 7.6m ? at v gs = 4.5v, i d = 13a ? low profile - 1mm max in power 33 ? rohs compliant general description this n-channel mosfet is a rugged gate version of fairchild semiconductor?s advanced power trench process. it has been optimized for power management applications. application ? dc - dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25c 15 a -continuous (silicon limited) t c = 25c 67 -continuous t a = 25c (note 1a) 15 -pulsed 30 p d power dissipation t c = 25c 41 w power dissipation t a = 25c (note 1a) 2.0 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 3 c/w r ja thermal resistance, junction to ambient (note 1a) 60 device marking device package reel size tape width quantity FDMC8854 FDMC8854 power 33 7?? 8mm 3000 units 1 2 3 4 5 6 7 8 d d d d g s s s bottom top power 33 4 3 2 1 5 6 7 8
FDMC8854 n-channel powertrench ? mosfet FDMC8854 rev.c www.fairchildsemi.com 2 notes: 1: r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2: pulse test: pulse width < 30 0 s, duty cycle < 2.0%. a. 60c/w when mounted on a 1 in 2 pad of 2 oz copper b. 135c/w when mounted on a minimum pad of 2 oz copper electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics (note 2) dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c 21 mv/ c i dss zero gate voltage drain current v ds = 24v, v gs = 0v 1 a i gss gate to source leakage current v gs = 20v, v gs = 0v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a11.93v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25c -6 mv/c r ds(on) static drain to source on resistance v gs = 10v, i d = 15a 4.4 5.7 m ? v gs = 4.5v, i d = 13a 5.6 7.6 v gs = 10v, i d = 15a, t j = 125c 6.6 9.0 g fs forward transconductance v ds = 5v, i d = 15a 60 s c iss input capacitance v ds = 10v, v gs = 0v, f = 1mhz 2560 3405 pf c oss output capacitance 515 685 pf c rss reverse transfer capacitance 290 435 pf r g gate resistance f = 1mhz 1.3 ? t d(on) turn-on delay time v dd = 10v, i d = 15a v gs = 10v, r gen = 6 ? 13 23 ns t r rise time 510ns t d(off) turn-off delay time 31 50 ns t f fall time 510ns q g(tot) total gate charge v dd =10v, i d = 15a, v gs = 10v 41 57 nc q gs gate to source gate charge 7 nc q gd gate to drain ?miller? charge 7 nc v sd source to drain diode forward voltage v gs = 0v, i s = 15a (note 2) 0.8 1.3 v t rr reverse recovery time i f = 15a, di/dt = 100a/ s 33 50 ns q rr reverse recovery charge 28 42 nc
FDMC8854 n-channel powertrench ? mosfet FDMC8854 rev.c www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 012345 0 30 60 90 120 150 180 v gs = 10.0v v gs = 4.0v v gs = 3.5v v gs =4.5v pulse duration = 80 p s duty cycle = 0.5%max i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 30 60 90 120 150 180 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 4.5v v gs = 3.5v v gs = 10.0v v gs = 4v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pulse duration = 80 p s duty cycle = 0.5%max i d =15a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 3 6 9 12 15 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d =15a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMC8854 n-channel powertrench ? mosfet FDMC8854 rev.c www.fairchildsemi.com 4 figure 7. 0 1020304050 0 2 4 6 8 10 v dd = 10v v dd =15v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 5v i d = 15a gate charge characteristics figure 8. 0.1 1 10 100 1000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 30 4000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 1 10 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 20 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 20 40 60 80 package limited r t jc = 3 o c/w v gs = 4.5v v gs = 10v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 100ms 1s 1ms r ds(on) limited 100 dc 10ms single pulse t j = max rated r t ja = 135 o c/w t a = 25 o c i d , drain current (a) v ds , drain to source voltage (v) figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 0.5 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 200 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ---------------------- - s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDMC8854 n-channel powertrench ? mosfet FDMC8854 rev.c www.fairchildsemi.com 5 figure 13. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 2 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.004 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDMC8854 n-channel powertrench ? mosfet FDMC8854 rev.c www.fairchildsemi.com 6
FDMC8854 rev.c www.fairchildsemi.com 7 FDMC8854 n-channel powertrench ? mosfet rev. i22 trademarks the following are registered and unregistere d trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make c hanges without further notice to any products herein to improve reliability, function or design. fairchild does not as sume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fair child semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perfor m when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in signif icant injury to the user. 2. a critical component is any comp onent of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life suppo rt device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first productio n this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this data sheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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